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Freescale Semiconductor Technical Data
Document Number: MRF6V2150N Rev. 2, 4/2008
RF Power Field - Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. * Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts Power Gain -- 25 dB Drain Efficiency -- 68.3% * Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW Output Power Features * Integrated ESD Protection * Excellent Thermal Stability * Facilitates Manual Gain Control, ALC and Modulation Techniques * 200C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6V2150NR1 MRF6V2150NBR1
10 - 450 MHz, 150 W, 50 V LATERAL N - CHANNEL SINGLE - ENDED BROADBAND RF POWER MOSFETs
CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6V2150NR1
CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6V2150NBR1 PARTS ARE SINGLE - ENDED
RFin/VGS
RFout/VDS
RFin/VGS
RFout/VDS
(Top View) Note: Exposed backside of the package is the source terminal for the transistor.
Figure 1. Pin Connections Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg TC TJ Value - 0.5 +110 - 0.5 + 12 - 65 to +150 150 200 Unit Vdc Vdc C C C
(c) Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
MRF6V2150NR1 MRF6V2150NBR1 1
RF Device Data Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 150 W CW Symbol RJC Value (1,2) 0.24 Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Drain - Source Breakdown Voltage (ID = 75 mA, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 Adc) Gate Quiescent Voltage (VDD = 50 Vdc, ID = 450 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Dynamic Characteristics Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 1.6 93 163 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1 1.5 -- 1.62 2.6 0.26 3 3.5 -- Vdc Vdc Vdc IDSS IDSS V(BR)DSS IGSS -- -- 110 -- -- -- -- -- 2.5 50 -- 10 mA Adc Vdc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 450 mA, Pout = 150 W, f = 220 MHz, CW Power Gain Gps 23.5 25 26.5 Drain Efficiency Input Return Loss D IRL 66 -- 68.3 - 17 -- -9
dB % dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. ATTENTION: The MRF6V2150N and MRF6V2150NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices.
MRF6V2150NR1 MRF6V2150NBR1 2 RF Device Data Freescale Semiconductor
B3 + B1 VBIAS + C1 + C2 + C3 C4 C5 C6 C7 R1 B2 L2 C17 C18 C19 C20 VSUPPLY
L1 C8 RF INPUT C9 C10 C11 R2 Z3 Z4 Z5 L3 Z7 Z6 Z8 Z9
C14
C15
C16 RF OUTPUT
Z10 C23 C21 C22
Z11
Z1 C12
Z2
C13
DUT
Z1 Z2 Z3 Z4 Z5 Z6, Z7
0.352 0.944 1.480 0.276 0.434 0.298
x 0.082 x 0.082 x 0.082 x 0.220 x 0.220 x 0.630
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z8 Z9 Z10 Z11 PCB
0.443 x 0.170 Microstrip 2.360 x 0.170 Microstrip 0.502 x 0.170 Microstrip 0.443 x 0.082 Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55
Figure 2. MRF6V2150NR1(NBR1) Test Circuit Schematic
Table 6. MRF6V2150NR1(NBR1) Test Circuit Component Designations and Values
Part B1, B2 B3 C1 C2 C3 C4, C17 C5, C18 C6, C11, C19 C7, C8, C15, C16 C9, C12, C14, C23 C10 C13 C20 C21 C22 L1 L2 L3 R1 R2 Description 95 , 100 MHz Long Ferrite Beads, Surface Mount 47 , 100 MHz Short Ferrite Bead, Surface Mount 47 F, 50 V Electrolytic Capacitor 22 F, 35 V Tantalum Chip Capacitor 10 F, 35 V Tantalum Chip Capacitor 39 K pF Chip Capacitors 22 K pF Chip Capacitors 0.1 F, 50 V Chip Capacitors 2.2 F, 50 V Chip Capacitors 1000 pF Chip Capacitors 220 nF Chip Capacitor 75 pF Chip Capacitor 470 F, 63 V Electrolytic Capacitor 30 pF Chip Capacitor 33 pF Chip Capacitor 4 Turn #18 AWG, 0.18" ID 82 nH Inductor 17.5 nH Inductor 270 , 1/4 W Chip Resistor 27 , 1/4 W Chip Resistor Part Number 2743021447 2743019447 476KXM063M T494X226K035AT T491D106K035AT ATC200B393KT50XT ATC200B203KT50XT CDR33BX104AKYS C1825C225J5RAC ATC100B102JT50XT C1812C224K5RAC ATC100B750JT500XT ESME630ELL471MK25S ATC100B300JT500XT ATC100B330JT500XT None 1812SMS - 82NJL B06TJL CRCW12062700FKEA CRCW12064R75FKEA Manufacturer Fair - Rite Fair - Rite Illinois Capacitor Kemet Kemet ATC ATC Kemet Kemet ATC Kemet ATC United Chemi - Con ATC ATC None Coilcraft Coilcraft Vishay Vishay
MRF6V2150NR1 MRF6V2150NBR1 RF Device Data Freescale Semiconductor 3
C1
C2
C3
+
B1 C4 C5 C6 B2 R1 C8 C15* C16* L2 C19 C18 C17 B3
+
C20
C7
C10 C11
C12 R2
C9
C14 L1 CUT OUT AREA C21 C22 C23
L3
C13
MRF6V2150N/NB Rev. 3
* Stacked
Figure 3. MRF6V2150NR1(NBR1) Test Circuit Component Layout
MRF6V2150NR1 MRF6V2150NBR1 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
1000 100
100
Coss Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc Crss
ID, DRAIN CURRENT (AMPS)
Ciss C, CAPACITANCE (pF)
10
10
TC = 25C 1 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 1 1 10 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 100 200
Figure 4. Capacitance versus Drain - Source Voltage
5 27 26 VGS = 3 V 3 2.75 V 2 2.5 V 1 2.25 V 0 0 20 40 60 80 100 120 DRAIN VOLTAGE (VOLTS) 21 1 2.63 V Gps, POWER GAIN (dB) 25
Figure 5. DC Safe Operating Area
ID, DRAIN CURRENT (AMPS)
4
IDQ = 675 mA 563 mA 450 mA
24 337 mA 23 22 225 mA VDD = 50 Vdc f = 220 MHz 10 Pout, OUTPUT POWER (WATTS) CW 100 200
Figure 6. DC Drain Current versus Drain Voltage
-10 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 5 10 100 Pout, OUTPUT POWER (WATTS) PEP 300 900 mA 48 22 563 mA 685 mA IDQ = 225 mA 336 mA 450 mA VDD = 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz Two-Tone Measurements, 100 kHz Tone Spacing Pout, OUTPUT POWER (dBm) 56 58
Figure 7. CW Power Gain versus Output Power
P3dB = 52.61 dBm (182.39 W) P1dB = 52.27 dBm (168.66 W)
Ideal
54
52
Actual
50 VDD = 50 Vdc, IDQ = 450 mA f = 220 MHz 24 26 28 30 32
Pin, INPUT POWER (dBm)
Figure 8. Third Order Intermodulation Distortion versus Output Power
Figure 9. CW Output Power versus Input Power
MRF6V2150NR1 MRF6V2150NBR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
26 24 Gps, POWER GAIN (dB) 22 45 V 20 35 V 18 16 14 0 50 100 150 200 Pout, OUTPUT POWER (WATTS) CW 25 V VDD = 20 V 30 V IDQ = 450 mA f = 220 MHz 40 V 50 V 55 TC = -30_C 50 25_C 45
Pout, OUTPUT POWER (dBm)
85_C
40 VDD = 50 Vdc IDQ = 450 mA f = 220 MHz 15 20 25 30 35
35 10
Pin, INPUT POWER (dBm)
Figure 10. Power Gain versus Output Power
28 25_C 27 Gps, POWER GAIN (dB) 26 TC = -30_C 25 25_C 24 85_C 23 22 21 5 10 Pout, OUTPUT POWER (WATTS) CW 100 D VDD = 50 Vdc IDQ = 450 mA f = 220 MHz 30 20 10 200 105 90 40 50 Gps 85_C -30_C 70 60 D, DRAIN EFFICIENCY (%) 107 80 108
Figure 11. Power Output versus Power Input
MTTF (HOURS)
106
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 150 W CW, and D = 68.3%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 12. Power Gain and Drain Efficiency versus CW Output Power
Figure 13. MTTF versus Junction Temperature
MRF6V2150NR1 MRF6V2150NBR1 6 RF Device Data Freescale Semiconductor
Zsource f = 220 MHz
Zo = 10
Zload f = 220 MHz
VDD = 50 Vdc, IDQ = 450 mA, Pout = 150 W CW f MHz 220 Zsource W 2.45 + j6.95 Zload W 3.90 + j5.50
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 14. Series Equivalent Source and Load Impedance
MRF6V2150NR1 MRF6V2150NBR1 RF Device Data Freescale Semiconductor 7
PACKAGE DIMENSIONS
MRF6V2150NR1 MRF6V2150NBR1 8 RF Device Data Freescale Semiconductor
MRF6V2150NR1 MRF6V2150NBR1 RF Device Data Freescale Semiconductor 9
MRF6V2150NR1 MRF6V2150NBR1 10 RF Device Data Freescale Semiconductor
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MRF6V2150NR1 MRF6V2150NBR1 12 RF Device Data Freescale Semiconductor
MRF6V2150NR1 MRF6V2150NBR1 RF Device Data Freescale Semiconductor 13
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 2 Date Feb. 2007 May 2007 Apr. 2008 * Initial Release of Data Sheet * Corrected Test Circuit Component part numbers in Table 6, Component Designations and Values for C4, C17, C5, C18, C9, C12, C14, C23, C13, C21, and C22, p. 3 * Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150C, p. 1 * Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection, Dynamic Characteristics table, p. 2 * Updated PCB information to show more specific material details, Fig. 2, Test Circuit Schematic, p. 3 * Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part numbers, p. 3 * Replaced Case Outline 1486 - 03, Issue C, with 1486 - 03, Issue D, p. 8 - 10. Added pin numbers 1 through 4 on Sheet 1. * Replaced Case Outline 1484 - 04, Issue D, with 1484 - 04, Issue E, p. 11 - 13. Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. Description
MRF6V2150NR1 MRF6V2150NBR1 14 RF Device Data Freescale Semiconductor
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MRF6V2150NR1 MRF6V2150NBR1
Document Number: RF Device Data MRF6V2150N Rev. 2, 4/2008 Freescale Semiconductor
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